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SMD Type
PNP General Purpose Transistor 2PB1219A
Transistors IC
Features
High current (max. 500 mA) Low voltage (max. 50 V) Low collector-emitter saturation voltage (max. 600 mV).
1 Emitter 2 Base 3 Collector
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Peak collector current Peak base current Total power dissipation Storage temperature Junction temperature Operating ambient temperature Thermal resistance from junction to ambient Symbol VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Rth j-a Rating -60 -50 -5 -500 -1 -200 200 -65 to +150 150 -65 to +150 625 K/W Unit V V V mA A mA mW
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1
SMD Type
2PB1219A
Electrical Characteristics Ta = 25
Parameter Collector cut-off current Symbol ICBO Testconditons IE = 0; VCB = -20 V IE = 0; VCB = -20 V; Tj = 150 Emitter cut-off current DC current gain 2PB1219AQ 2PB1219AR 2PB1219AS Collector-emitter saturation voltage Base-emitter saturation voltage Collector capacitance Transition frequency 2PB1219AQ 2PB1219AR 2PB1219AS * Pulse test: tp 300 is; a 0.02. IEBO IC = 0; VEB = -4 V
Transistors IC
Min
Typ
Max -100 -5 -100
Unit nA iA nA
hFE
IC = -150 mA; VCE = -10 V; *
85 120 170
170 240 340 -600 -1.5 15 mV V pF
VCE(sat) IC = -300 mA; IB = -30 mA; * VBE(sat) IC = -300 mA; IB = -30 mA; * Cc IE = ie = 0; VCB = -10 V; f = 1 MHz 100 120 140
fT
IC = 50 mA; VCE = -10 V;f = 100 MHz;*
MHz
hFE Classification
TYPE Marking 2PB1219AQ DQ 2PB1219AR DR 2PB1219AS DS
2
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